Tulkot latviski
Transistor: N-MOSFET | TrenchFET® | unipolar | 30V | 60A | Idm: 140A | 26W
Transistor: N-MOSFET | TrenchFET® | unipolar | 30V | 60A | Idm: 140A | 26W
EB Kods: EB1564097198
Ražotāja preces kods: SIRA10DP-T1-GE3
Ražotāja preces kods:
SIRA10DP-T1-GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
1,16 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | 30V |
| Drain current | 60A |
| Pulsed drain current | 140A |
| Power dissipation | 26W |
| Case | PowerPAK® SO8 |
| Gate-source voltage | -16...20V |
| On-state resistance | 5mΩ |
| Mounting | SMD |
| Gate charge | 51nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |