Tulkot latviski

Transistor: IGBT | PT | 900V | 43A | 337W | TO247-3

EB Kods: EB571178262

Ražotāja preces kods: 
APT43GA90BD30

Ražotājs, zīmols: 
MICROCHIP TECHNOLOGY

 17,12  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
TechnologyPOWER MOS 8®
TechnologyPT
Collector-emitter voltage900V
Collector current43A
Power dissipation337W
CaseTO247-3
Gate-emitter voltage±30V
Pulsed collector current129A
MountingTHT
Gate charge116nC
Kind of packagetube
Turn-on time28ns
Turn-off time246ns
Features of semiconductor devicesintegrated anti-parallel diode