Tulkot latviski
Transistor: IGBT | PT | 900V | 43A | 337W | TO247-3
Transistor: IGBT | PT | 900V | 43A | 337W | TO247-3
EB Kods: EB571178262
Ražotāja preces kods: APT43GA90BD30
Ražotāja preces kods:
APT43GA90BD30
Ražotājs, zīmols: MICROCHIP TECHNOLOGY
Ražotājs, zīmols:
MICROCHIP TECHNOLOGY
17,12 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | IGBT |
Technology | POWER MOS 8® |
Technology | PT |
Collector-emitter voltage | 900V |
Collector current | 43A |
Power dissipation | 337W |
Case | TO247-3 |
Gate-emitter voltage | ±30V |
Pulsed collector current | 129A |
Mounting | THT |
Gate charge | 116nC |
Kind of package | tube |
Turn-on time | 28ns |
Turn-off time | 246ns |
Features of semiconductor devices | integrated anti-parallel diode |