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Transistor: P-MOSFET | unipolar | -100V | -0.69A | Idm: -8.8A | 3.1W
Transistor: P-MOSFET | unipolar | -100V | -0.69A | Idm: -8.8A | 3.1W
EB Kods: EB1884561647
Ražotāja preces kods: IRFL9110TRPBF
Ražotāja preces kods:
IRFL9110TRPBF
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
0,60 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Polarisation | unipolar |
Drain-source voltage | -100V |
Drain current | -0.69A |
Pulsed drain current | -8.8A |
Power dissipation | 3.1W |
Case | SOT223 |
Gate-source voltage | ±20V |
On-state resistance | 1.2Ω |
Mounting | SMD |
Gate charge | 8.7nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |