• Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 1
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 2
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 3
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 4
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 5
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 6
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 7
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 8
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 9
  • Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC image 10
Tulkot latviski

Samsung MZ-V9P2T0 2 TB M.2 PCI Express 4.0 NVMe V-NAND MLC

EB Kods: EB1271966164

Ražotāja preces kods: 
MZ-V9P2T0GW

Ražotājs, zīmols: 
SAMSUNG

 275,64 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 3-5 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Features

Random write (4KB)1550000 IOPS
M.2 SSD size2280 (22 x 80 mm)
S.M.A.R.T. supportYes
Hardware encryptionYes
SSD form factorM.2
Memory typeV-NAND MLC
TRIM supportYes
DevSlp (device sleep) supportYes
NVMeYes
Read speed7450 MB/s
NVMe version2.0
Component forPC
InterfacePCI Express 4.0
Mean time between failures (MTBF)1500000 h
SSD capacity2 TB
Random read (4KB)1400000 IOPS
Security algorithms256-bit AES
Write speed6900 MB/s

Power

Power consumption (max)7.8 W
Power consumption (average)5.4 W
Operating voltage3.3 V

Operational conditions

Operating shock1500 G
Operating temperature (T-T)0 - 70 °C

Weight & dimensions

Depth8.2 mm
Height24.3 mm
Width80 mm
Weight28 g