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Transistor: P-MOSFET | TrenchFET® | unipolar | -60V | -110A | Idm: -200A
Transistor: P-MOSFET | TrenchFET® | unipolar | -60V | -110A | Idm: -200A
EB Kods: EB1958544338
Ražotāja preces kods: SUM110P06-08L-E3
Ražotāja preces kods:
SUM110P06-08L-E3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
4,91 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -60V |
Drain current | -110A |
Pulsed drain current | -200A |
Power dissipation | 272W |
Case | TO263 |
Gate-source voltage | ±20V |
On-state resistance | 16mΩ |
Mounting | SMD |
Gate charge | 240nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |