Tulkot latviski
Transistor: P-MOSFET | TrenchFET® | unipolar | -20V | -1.75A | Idm: -8A
Transistor: P-MOSFET | TrenchFET® | unipolar | -20V | -1.75A | Idm: -8A
EB Kods: EB164955896
Ražotāja preces kods: SI1077X-T1-GE3
Ražotāja preces kods:
SI1077X-T1-GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
0,65 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -20V |
Drain current | -1.75A |
Pulsed drain current | -8A |
Power dissipation | 0.33W |
Case | SC89 |
Gate-source voltage | ±8V |
On-state resistance | 188mΩ |
Mounting | SMD |
Gate charge | 31.1nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |