• Samsung 990 EVO M.2 2 TB PCI Express 4.0 NVMe V-NAND TLC image 1
  • Samsung 990 EVO M.2 2 TB PCI Express 4.0 NVMe V-NAND TLC image 2
  • Samsung 990 EVO M.2 2 TB PCI Express 4.0 NVMe V-NAND TLC image 3
  • Samsung 990 EVO M.2 2 TB PCI Express 4.0 NVMe V-NAND TLC image 4
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Samsung 990 EVO M.2 2 TB PCI Express 4.0 NVMe V-NAND TLC

EB Kods: EB862834973

Ražotāja preces kods: 
MZ-V9E2T0BW

Ražotājs, zīmols: 
SAMSUNG

210,53 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 3-5 darba dienas pēc apmaksas. 
Uzdot jautājumu
-+

Technical details

Warranty period5 year(s)

Features

Security algorithms256-bit AES
Memory typeV-NAND TLC
PCI Express CEM revision4.0
S.M.A.R.T. supportYes
Hardware encryptionYes
SSD capacity2 TB
PCI Express interface data lanesx4
Component forUniversal
Read speed5000 MB/s
InterfacePCI Express 4.0
NVMe version2.0
Mean time between failures (MTBF)1500000 h
NVMeYes
Write speed4200 MB/s
TBW rating1200
TRIM supportYes
SSD form factorM.2
M.2 SSD size2280 (22 x 80 mm)

Power

Power consumption (write)4.7 W
Power consumption (read)5.5 W
Power consumption (sleep)0.005 W
Operating voltage3.3 V
Power consumption (idle)0.06 W

Operational conditions

Operating relative humidity (H-H)5 - 95%
Non-operating shock1500 G
Operating temperature (T-T)0 - 70 °C
Storage relative humidity (H-H)5 - 95%
Non-operating vibration20 G
Storage temperature (T-T)-40 - 85 °C

Weight & dimensions

Height2.38 mm
Depth22.1 mm
Weight9 g
Width80.2 mm

Packaging data

Package typeBox