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Transistor: P-MOSFET | unipolar | -100V | -15.6A | 125W | D2PAK
Transistor: P-MOSFET | unipolar | -100V | -15.6A | 125W | D2PAK
EB Kods: EB914782505
Ražotāja preces kods: FQB22P10TM
Ražotāja preces kods:
FQB22P10TM
Ražotājs, zīmols: ONSEMI
Ražotājs, zīmols:
ONSEMI
2,67 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | QFET® |
Polarisation | unipolar |
Drain-source voltage | -100V |
Drain current | -15.6A |
Power dissipation | 125W |
Case | D2PAK |
Gate-source voltage | ±30V |
On-state resistance | 0.125Ω |
Mounting | SMD |
Gate charge | 50nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |