• Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND image 1
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND image 2
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND image 3
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND image 4
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND image 5
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND image 6
  • Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND image 7
Tulkot latviski

Goodram IRDM PRO NANO IRP-SSDPR-P44N-512-30 internal solid state drive M.2 512 GB PCI Express 4.0 NVMe 3D NAND

EB Koodi: EB1513116207

Valmistajan tuotekoodi: 
IRP-SSDPR-P44N-512-30

Valmistaja, merkki: 
GOODRAM

 93,33 € 
Sisältää arvonlisäveron / gb
Toimittajan varastossa >10 kpl
⛟ Toimitus 3-5 työpäivää maksun jälkeen. 
On kysymys?
-+

Features

InterfacePCI Express 4.0
NVMeYes
Write speed4600 MB/s
TBW rating300
Random read (4KB)780000 IOPS
Read speed5100 MB/s
Component forNotebook/Game console
SSD capacity512 GB
PCI Express interface data lanesx4
Mean time between failures (MTBF)1500000 h
Controller typePhison E21T
M.2 SSD size2230 (22 x 30 mm)
Memory type3D NAND
ECCYes
SSD form factorM.2
Random write (4KB)920000 IOPS

Operational conditions

Operating temperature (T-T)0 - 70 °C
Maximum operating temperature70 °C
Storage temperature (T-T)-40 - 85 °C

Weight & dimensions

Depth30 mm
Height2.2 mm
Width22 mm