Tulkot latviski
SEMICONDUCTOR COMPONENT ANALYZER
SEMICONDUCTOR COMPONENT ANALYZER
EB Koodi: EB361289983
Valmistajan tuotekoodi:
DCA55
Valmistajan tuotekoodi:
DCA55
Valmistaja, merkki: United Kingdom
Valmistaja, merkki:
United Kingdom
143,92 €
Sisältää arvonlisäveron / gb
Toimittajan varastossa >10 kpl
⛟ Toimitus 5-8 työpäivää maksun jälkeen.
⛟ Toimitus 5-8 työpäivää maksun jälkeen.
Product basic info: "
†Primary colours: Black "
†Additional colours: Blue "
†Depth unit: 20 mm "
†Height unit: 70 mm "
†Width unit: 103 cm "
†Weight unit: 98 g "†Technical data: "
†Maximum peak test current into s/c: 5.5 mA "
†Maximum peak test voltage across o/s: 5.1 V "
†Diode specs:
†SCR/triac specs:
†Transistor specs:
†Operating temperature range: 0-50 °C "†Power supply: "
†Batteries included: No "
†Number of batteries: 1 "
†Battery voltage rating: 1.5 V "
†Battery composition: Alkaline "
†Battery IEC size: AAA (LR03, R03, FR03, HR03, KR03, ZR03 ,24A, 24D, 24LF, UM4, Micro, MN2400, MX2400, MV2400)
automatic component type identification "†automatic pinout identification "†special feature identification such as protection diodes and resistor shunts "†bipolar transistors: gain and leakage current measurements, silicon and germanium detection "†gate threshold measurement for Enhancement Mode MOSFETs "†semiconductor forward voltage measurement for diodes, LEDs and transistor Base-Emitter junctions "†automatic and manual power-off
†Primary colours: Black "
†Additional colours: Blue "
†Depth unit: 20 mm "
†Height unit: 70 mm "
†Width unit: 103 cm "
†Weight unit: 98 g "†Technical data: "
†Maximum peak test current into s/c: 5.5 mA "
†Maximum peak test voltage across o/s: 5.1 V "
†Diode specs:
- Test current: 5.0 mA
- Voltage accuracy: -2% -20 mV to +2% +20 mV
- Vf for LED identification: 1.50 V - 4.00 V
- Short circuit threshold: 10 Ohm
†SCR/triac specs:
- Gate test current: 4.5 mA
- Load test current: 5.0 mA
†Transistor specs:
- Gain range (Hfe): 4 - 65000
- Gain accuracy: ± 3 % ± 5 Hfe
- Vceo test voltage: 2.0 V - 3.0 V
- Vbe accuracy: -2 % -20 mV to +2 % +20 mV
- VBE for Darlington (shunted): 0.95 V - 1.80 V (0.75 V - 1.80 V)
- Base-emitter shunt threshold: 50 kOhm - 70 kOhm
- BJT collector test current: 2.45 mA - 2.55 mA
- BJT acceptable leakage: 0.7 mA
- MOSFET:
- Gate threshold range: 0.1 V - 5.0 V
- Threshold accuracy: -2 % -20 mV to +2 % +20 mV
- Drain test current: 2.45 mA - 2.55 mA
- Gate resistance: 8 kOhm
- Depletion drain test current: 4.5 mA
- JFET drain-source test current: 0.5 mA - 5.5 mA
†Operating temperature range: 0-50 °C "†Power supply: "
†Batteries included: No "
†Number of batteries: 1 "
†Battery voltage rating: 1.5 V "
†Battery composition: Alkaline "
†Battery IEC size: AAA (LR03, R03, FR03, HR03, KR03, ZR03 ,24A, 24D, 24LF, UM4, Micro, MN2400, MX2400, MV2400)
automatic component type identification "†automatic pinout identification "†special feature identification such as protection diodes and resistor shunts "†bipolar transistors: gain and leakage current measurements, silicon and germanium detection "†gate threshold measurement for Enhancement Mode MOSFETs "†semiconductor forward voltage measurement for diodes, LEDs and transistor Base-Emitter junctions "†automatic and manual power-off