Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 650V | 18A | Idm: 69A | 96W | TO247
Transistor: N-MOSFET | SiC | unipolar | 650V | 18A | Idm: 69A | 96W | TO247
EB Kood: EB2089485620
Tootja kauba kood: IMW65R072M1HXKSA1
Tootja kauba kood:
IMW65R072M1HXKSA1
Tootja, kaubamärk: INFINEON TECHNOLOGIES
Tootja, kaubamärk:
INFINEON TECHNOLOGIES
23,94 €
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Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | CoolSiC™ |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 650V |
Drain current | 18A |
Pulsed drain current | 69A |
Power dissipation | 96W |
Case | TO247 |
Gate-source voltage | -5...23V |
On-state resistance | 94mΩ |
Mounting | THT |
Kind of package | tube |
Kind of channel | enhanced |