Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 47A | Idm: 150A | 357W
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 47A | Idm: 150A | 357W
EB Kood: EB1597209331
Tootja kauba kood: DIW170SIC049
Tootja kauba kood:
DIW170SIC049
Tootja, kaubamärk: DIOTEC SEMICONDUCTOR
Tootja, kaubamärk:
DIOTEC SEMICONDUCTOR
22,20 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.7kV |
| Drain current | 47A |
| Pulsed drain current | 150A |
| Power dissipation | 357W |
| Case | TO247-3 |
| Gate-source voltage | -4...18V |
| On-state resistance | 81mΩ |
| Mounting | THT |
| Gate charge | 179nC |
| Kind of package | tube |
| Kind of channel | enhancement |