Tulkot latviski

Module: IGBT | diode/transistor | boost chopper | Urmax: 1200V | L2.2

EB Kood: EB388243897

Tootja kauba kood: 
GD15PJY120L2S

Tootja, kaubamärk: 
STARPOWER SEMICONDUCTOR

 38,24 € 
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
Küsimus?
-+

Product Properties

Type of moduleIGBT
Semiconductor structurediode/transistor
Topologyboost chopper
TopologyIGBT three-phase bridge OE output
TopologyNTC thermistor
Topologythree-phase diode bridge
Max. off-state voltage1.2kV
Collector current15A
CaseL2.2
Electrical mountingPress-in PCB
Gate-emitter voltage±20V
Pulsed collector current30A
TechnologyAdvanced Trench FS IGBT
Mechanical mountingscrew