Tulkot latviski
Transistor: IGBT | SiC SBD | 650V | 50A | 357W | TO247-4
Transistor: IGBT | SiC SBD | 650V | 50A | 357W | TO247-4
EB Kood: EB852502668
Tootja kauba kood: BGH50N65ZF1
Tootja kauba kood:
BGH50N65ZF1
Tootja, kaubamärk: BASiC SEMICONDUCTOR
Tootja, kaubamärk:
BASiC SEMICONDUCTOR
16,65 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | IGBT |
| Technology | Field Stop |
| Technology | SiC SBD |
| Technology | Trench |
| Collector-emitter voltage | 650V |
| Collector current | 50A |
| Power dissipation | 357W |
| Case | TO247-4 |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 200A |
| Mounting | THT |
| Gate charge | 308nC |
| Kind of package | tube |
| Turn-on time | 54ns |
| Turn-off time | 476ns |
| Features of semiconductor devices | integrated anti-parallel diode |