Tulkot latviski
Transistor: IGBT | SiC SBD | 650V | 50A | 357W | TO247-3
Transistor: IGBT | SiC SBD | 650V | 50A | 357W | TO247-3
EB Kood: EB597264321
Tootja kauba kood: BGH50N65HF1
Tootja kauba kood:
BGH50N65HF1
Tootja, kaubamärk: BASiC SEMICONDUCTOR
Tootja, kaubamärk:
BASiC SEMICONDUCTOR
18,40 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | IGBT |
Technology | Field Stop |
Technology | SiC SBD |
Technology | Trench |
Collector-emitter voltage | 650V |
Collector current | 50A |
Power dissipation | 357W |
Case | TO247-3 |
Gate-emitter voltage | ±20V |
Pulsed collector current | 200A |
Mounting | THT |
Gate charge | 308nC |
Kind of package | tube |
Turn-on time | 54ns |
Turn-off time | 256ns |
Features of semiconductor devices | integrated anti-parallel diode |