Tulkot latviski
Transistor: IGBT | PT | 1.2kV | 54A | 625W | T-Max
Transistor: IGBT | PT | 1.2kV | 54A | 625W | T-Max
EB Kood: EB330402365
Tootja kauba kood: APT45GP120B2DQ2G
Tootja kauba kood:
APT45GP120B2DQ2G
Tootja, kaubamärk: MICROCHIP (MICROSEMI)
Tootja, kaubamärk:
MICROCHIP (MICROSEMI)
34,05 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | IGBT |
| Technology | POWER MOS 7® |
| Technology | PT |
| Collector-emitter voltage | 1.2kV |
| Collector current | 54A |
| Power dissipation | 625W |
| Case | T-Max |
| Gate-emitter voltage | ±30V |
| Pulsed collector current | 170A |
| Mounting | THT |
| Gate charge | 185nC |
| Kind of package | tube |
| Turn-on time | 47ns |
| Turn-off time | 230ns |
| Features of semiconductor devices | integrated anti-parallel diode |