Tulkot latviski

Transistor: IGBT | BiMOSFET™ | 1.7kV | 24A | 250W | TO268

EB Kood: EB1750621218

Tootja kauba kood: 
IXBT24N170

Tootja, kaubamärk: 
IXYS

36,28 
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorIGBT
TechnologyBiMOSFET™
Collector-emitter voltage1.7kV
Collector current24A
Power dissipation250W
CaseTO268
Gate-emitter voltage±20V
Pulsed collector current230A
MountingSMD
Gate charge0.14µC
Kind of packagetube
Turn-on time190ns
Turn-off time1285ns
Features of semiconductor deviceshigh voltage