Tulkot latviski
Transistor: P-MOSFET | TrenchFET® | unipolar | -40V | -2.4A | Idm: -12A
Transistor: P-MOSFET | TrenchFET® | unipolar | -40V | -2.4A | Idm: -12A
EB Kood: EB368621097
Tootja kauba kood: SI2319DS-T1-E3
Tootja kauba kood:
SI2319DS-T1-E3
Tootja, kaubamärk: VISHAY
Tootja, kaubamärk:
VISHAY
1,47 €
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Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -40V |
Drain current | -2.4A |
Pulsed drain current | -12A |
Power dissipation | 0.8W |
Case | SOT23 |
Gate-source voltage | ±20V |
On-state resistance | 0.13Ω |
Mounting | SMD |
Gate charge | 17nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |