Tulkot latviski

Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -35A | Idm: -80A

EB Kood: EB1603468860

Tootja kauba kood: 
SISH625DN-T1-GE3

Tootja, kaubamärk: 
VISHAY

 1,00  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-30V
Drain current-35A
Pulsed drain current-80A
Power dissipation33W
CasePowerPAK® 1212-8
Gate-source voltage±20V
On-state resistance11mΩ
MountingSMD
Gate charge126nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced