Tulkot latviski
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -35A | Idm: -80A
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -35A | Idm: -80A
EB Kood: EB1603468860
Tootja kauba kood: SISH625DN-T1-GE3
Tootja kauba kood:
SISH625DN-T1-GE3
Tootja, kaubamärk: VISHAY
Tootja, kaubamärk:
VISHAY
1,00 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
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Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -35A |
Pulsed drain current | -80A |
Power dissipation | 33W |
Case | PowerPAK® 1212-8 |
Gate-source voltage | ±20V |
On-state resistance | 11mΩ |
Mounting | SMD |
Gate charge | 126nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |