Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 54A | Idm: 200A | 517W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 54A | Idm: 200A | 517W
EB Kood: EB1667294195
Tootja kauba kood: S3M0025120D
Tootja kauba kood:
S3M0025120D
Tootja, kaubamärk: SMC DIODE SOLUTIONS
Tootja, kaubamärk:
SMC DIODE SOLUTIONS
12,04 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 54A |
| Pulsed drain current | 200A |
| Power dissipation | 517W |
| Case | TO247-3 |
| Gate-source voltage | -4...18V |
| On-state resistance | 36mΩ |
| Mounting | THT |
| Gate charge | 175nC |
| Kind of package | tube |
| Kind of channel | enhancement |