Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 12A | Idm: 40A | 121W | TOLL

EB Kood: EB779411227

Tootja kauba kood: 
S2M0160120T

Tootja, kaubamärk: 
SMC DIODE SOLUTIONS

 2,89  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current12A
Pulsed drain current40A
Power dissipation121W
CaseTOLL
Gate-source voltage-5...20V
On-state resistance0.3Ω
MountingSMD
Gate charge26.5nC
Kind of packagereel
Kind of packagetape
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal