Tulkot latviski
Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 50A | SOT227B
Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 50A | SOT227B
EB Kood: EB1706231632
Tootja kauba kood: IXGN50N120C3H1
Tootja kauba kood:
IXGN50N120C3H1
Tootja, kaubamärk: IXYS
Tootja, kaubamärk:
IXYS
48,11 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos 6 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
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Type of module | IGBT |
Semiconductor structure | single transistor |
Max. off-state voltage | 1.2kV |
Collector current | 50A |
Case | SOT227B |
Electrical mounting | screw |
Gate-emitter voltage | ±20V |
Pulsed collector current | 240A |
Power dissipation | 460W |
Technology | GenX3™ |
Technology | PT |
Mechanical mounting | screw |