Tulkot latviski

Transistor: N-MOSFET x2 | unipolar | 30V | 0.17A | Idm: 0.8A | 0.4W

EB Kood: EB548881478

Tootja kauba kood: 
DMN63D8LDW-7

Tootja, kaubamärk: 
DIODES INCORPORATED

0,23 
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage30V
Drain current0.17A
Pulsed drain current0.8A
Power dissipation0.4W
CaseSOT363
Gate-source voltage±20V
On-state resistance4.5Ω
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate