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Transistor: P-MOSFET | TrenchFET® | unipolar | -20V | -1.75A | Idm: -8A
Transistor: P-MOSFET | TrenchFET® | unipolar | -20V | -1.75A | Idm: -8A
Code: EB164955896
Manufacturer's product code: SI1077X-T1-GE3
Manufacturer's product code:
SI1077X-T1-GE3
Manufacturer, Brand: VISHAY
Manufacturer, Brand:
VISHAY
0,65 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -20V |
Drain current | -1.75A |
Pulsed drain current | -8A |
Power dissipation | 0.33W |
Case | SC89 |
Gate-source voltage | ±8V |
On-state resistance | 188mΩ |
Mounting | SMD |
Gate charge | 31.1nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |