Tulkot latviski
Module | single transistor | 150V | 310A | SOT227B | screw | Idm: 900A
Module | single transistor | 150V | 310A | SOT227B | screw | Idm: 900A
EB Kods: EB973808335
Ražotāja preces kods: IXFN360N15T2
Ražotāja preces kods:
IXFN360N15T2
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
64,08 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | MOSFET transistor |
Semiconductor structure | single transistor |
Drain-source voltage | 150V |
Drain current | 310A |
Case | SOT227B |
Electrical mounting | screw |
Polarisation | unipolar |
On-state resistance | 4mΩ |
Pulsed drain current | 900A |
Power dissipation | 1.07kW |
Technology | GigaMOS™ |
Technology | HiPerFET™ |
Technology | TrenchT2™ |
Kind of channel | enhanced |
Gate charge | 715nC |
Reverse recovery time | 150ns |
Gate-source voltage | ±30V |
Mechanical mounting | screw |