Tulkot latviski

Transistor: IGBT | PT | 1.2kV | 54A | 625W | T-Max

EB Kods: EB330402365

Ražotāja preces kods: 
APT45GP120B2DQ2G

Ražotājs, zīmols: 
MICROCHIP (MICROSEMI)

34,85 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorIGBT
TechnologyPOWER MOS 7®
TechnologyPT
Collector-emitter voltage1.2kV
Collector current54A
Power dissipation625W
CaseT-Max
Gate-emitter voltage±30V
Pulsed collector current170A
MountingTHT
Gate charge185nC
Kind of packagetube
Turn-on time47ns
Turn-off time230ns
Features of semiconductor devicesintegrated anti-parallel diode