Tulkot latviski

Transistor: IGBT | BiMOSFET™ | 1.7kV | 10A | 140W | TO247-3

EB Kods: EB1317872320

Ražotāja preces kods: 
IXBH10N170

Ražotājs, zīmols: 
IXYS

15,73 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
TechnologyBiMOSFET™
Collector-emitter voltage1.7kV
Collector current10A
Power dissipation140W
CaseTO247-3
Gate-emitter voltage±20V
Pulsed collector current40A
MountingTHT
Gate charge30nC
Kind of packagetube
Turn-on time63ns
Turn-off time1.8µs
Features of semiconductor deviceshigh voltage