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Transistor: P-MOSFET | unipolar | -20V | -3.8A | Idm: -20A | 1.1W | SOT23

EB Kods: EB1649456907

Ražotāja preces kods: 
SI2323DDS-T1-GE3

Ražotājs, zīmols: 
VISHAY

0,78 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
Polarisationunipolar
Drain-source voltage-20V
Drain current-3.8A
Pulsed drain current-20A
Power dissipation1.1W
CaseSOT23
Gate-source voltage±8V
On-state resistance68mΩ
MountingSMD
Gate charge13.6nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced