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Transistor: P-MOSFET | TrenchFET® | unipolar | -40V | -3A | Idm: -12A

EB Kods: EB1259317772

Ražotāja preces kods: 
SI2319DS-T1-GE3

Ražotājs, zīmols: 
VISHAY

0,86 €
Bez PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-40V
Drain current-3A
Pulsed drain current-12A
Power dissipation1.25W
CaseSOT23
Gate-source voltage±20V
On-state resistance0.13Ω
MountingSMD
Gate charge17nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced