Tulkot latviski

Transistor: P-MOSFET | TrenchFET® | unipolar | -20V | -89.6A | 42.1W

EB Kods: EB1864958207

Ražotāja preces kods: 
SISS61DN-T1-GE3

Ražotājs, zīmols: 
VISHAY

1,34 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-20V
Drain current-89.6A
Pulsed drain current-200A
Power dissipation42.1W
CasePowerPAK® 1212-8
Gate-source voltage±8V
On-state resistance9.8mΩ
MountingSMD
Gate charge231nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced