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Transistor: N-MOSFET | WMOS™ F2 | unipolar | 650V | 45A | Idm: 245A | 410W
Transistor: N-MOSFET | WMOS™ F2 | unipolar | 650V | 45A | Idm: 245A | 410W
EB Kods: EB1229969498
Ražotāja preces kods: WMJ80N65F2
Ražotāja preces kods:
WMJ80N65F2
Ražotājs, zīmols: WAYON
Ražotājs, zīmols:
WAYON
18,12 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | WMOS™ F2 |
| Polarisation | unipolar |
| Drain-source voltage | 650V |
| Drain current | 45A |
| Pulsed drain current | 245A |
| Power dissipation | 410W |
| Case | TO247-3 |
| Gate-source voltage | ±30V |
| On-state resistance | 37mΩ |
| Mounting | THT |
| Gate charge | 26.2nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Reverse recovery time | 190ns |