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Transistor: N-MOSFET | TrenchFET® | unipolar | 60V | 3.2A | Idm: 10A

EB Kods: EB632185711

Ražotāja preces kods: 
SI3458BDV-T1-GE3

Ražotājs, zīmols: 
VISHAY

1,17 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage60V
Drain current3.2A
Pulsed drain current10A
Power dissipation2.1W
CaseTSOP6
Gate-source voltage±20V
On-state resistance0.1Ω
MountingSMD
Gate charge11nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced