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Transistor: N-MOSFET x2 | unipolar | 30V | 0.17A | Idm: 0.8A | 0.4W

EB Kods: EB548881478

Ražotāja preces kods: 
DMN63D8LDW-7

Ražotājs, zīmols: 
DIODES INCORPORATED

0,22 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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Product Properties

Type of transistorN-MOSFET x2
Polarisationunipolar
Drain-source voltage30V
Drain current0.17A
Pulsed drain current0.8A
Power dissipation0.4W
CaseSOT363
Gate-source voltage±20V
On-state resistance4.5Ω
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate