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Transistor: P-MOSFET | TRENCH POWER LV | unipolar | -20V | -2.7A | 1W
Transistor: P-MOSFET | TRENCH POWER LV | unipolar | -20V | -2.7A | 1W
EB Kods: EB1485337135
Ražotāja preces kods: YJL2301C
Ražotāja preces kods:
YJL2301C
Ražotājs, zīmols: YANGJIE TECHNOLOGY
Ražotājs, zīmols:
YANGJIE TECHNOLOGY
0,0826 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | TRENCH POWER LV |
Polarisation | unipolar |
Drain-source voltage | -20V |
Drain current | -2.7A |
Pulsed drain current | -14A |
Power dissipation | 1W |
Case | SOT23 |
Gate-source voltage | ±10V |
On-state resistance | 95mΩ |
Mounting | SMD |
Gate charge | 4.3nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |