Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 4.1A | Idm: 15A | 100W
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 4.1A | Idm: 15A | 100W
EB Kods: EB1697330651
Ražotāja preces kods: S1M1000170J
Ražotāja preces kods:
S1M1000170J
Ražotājs, zīmols: SMC DIODE SOLUTIONS
Ražotājs, zīmols:
SMC DIODE SOLUTIONS
4,91 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.7kV |
Drain current | 4.1A |
Pulsed drain current | 15A |
Power dissipation | 100W |
Case | D2PAK-7 |
Gate-source voltage | -5...20V |
On-state resistance | 1.9Ω |
Mounting | SMD |
Gate charge | 10nC |
Kind of package | tube |
Kind of channel | enhancement |
Features of semiconductor devices | Kelvin terminal |