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Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 4.1A | Idm: 15A | 100W

EB Kods: EB1697330651

Ražotāja preces kods: 
S1M1000170J

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 4,91  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.7kV
Drain current4.1A
Pulsed drain current15A
Power dissipation100W
CaseD2PAK-7
Gate-source voltage-5...20V
On-state resistance1.9Ω
MountingSMD
Gate charge10nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal