Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 900V | 32A | Idm: 184A | 110W
Transistor: N-MOSFET | SiC | unipolar | 900V | 32A | Idm: 184A | 110W
EB Kood: EB1605801066
Tootja kauba kood: NTHL060N090SC1
Tootja kauba kood:
NTHL060N090SC1
Tootja, kaubamärk: ONSEMI
Tootja, kaubamärk:
ONSEMI
19,01 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 900V |
Drain current | 32A |
Pulsed drain current | 184A |
Power dissipation | 110W |
Case | TO247-3 |
Gate-source voltage | -10...20V |
On-state resistance | 60mΩ |
Mounting | THT |
Gate charge | 87nC |
Kind of package | tube |
Kind of channel | enhanced |