Tulkot latviski
Transistor: N-MOSFET | unipolar | 100V | 228A | Idm: 912A | 320.5W
Transistor: N-MOSFET | unipolar | 100V | 228A | Idm: 912A | 320.5W
EB Kood: EB750112869
Tootja kauba kood: WMJ028N10HGS
Tootja kauba kood:
WMJ028N10HGS
Tootja, kaubamärk: WAYON
Tootja, kaubamärk:
WAYON
3,35 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 100V |
| Drain current | 228A |
| Pulsed drain current | 912A |
| Power dissipation | 320.5W |
| Case | TO247-3 |
| Gate-source voltage | ±20V |
| On-state resistance | 3mΩ |
| Mounting | THT |
| Gate charge | 145nC |
| Kind of package | tube |
| Kind of channel | enhancement |